Qorvo recently unveiled its latest asymmetric Doherty amplifier, the QPD2731, designed to assist customers in optimizing their wireless base station equipment designs for enhanced performance. This innovative GaN-on-SiC solution integrates dual transistors within a single package to maximize linearity, efficiency, and gain while minimizing operational expenses.
Eric Higham, Director of Strategy Analytics Services, highlighted that GaN devices surpass other high-frequency technologies like GaAs and InP in terms of power handling capabilities. Additionally, GaN outperforms conventional power technologies such as LDMOS in frequency performance. Roger Hall, General Manager at Qorvo’s High Performance Solutions division, noted that today's telecommunications infrastructure must deliver cost-effective solutions. He emphasized that the QPD2731 meets these requirements by offering a high-performance alternative for operators looking to expand their feature offerings.
Due to the limited thermal performance of LDMOS and traditional GaN-on-Si solutions, there is growing demand for GaN-on-SiC technology. The QPD2731 facilitates this shift by incorporating pre-matched GaN-on-SiC high electron mobility transistors (HEMTs). Currently in the sampling phase, this new amplifier provides industry-leading performance across the 2.5 to 2.7 GHz band.
According to Qorvo’s previous announcements, the QPD2731 achieves linearization through a standard, commercially available third-party digital predistortion (DPD) system. Qorvo also provides an extensive lineup of GaN-based discrete transistor products, offering varying power, voltage, and frequency options in both die and packaged formats.
This advancement represents a significant step forward in wireless infrastructure technology, enabling operators to enhance service quality while reducing costs. As the market continues to evolve, Qorvo remains committed to delivering cutting-edge solutions that meet the demands of modern communication networks.
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